A 180-220-GHz, 12.7-dBm peak Psat and 17.3% peak PAE Power Amplifier in 250-nm InP HBT
Author:
Affiliation:
1. University of California,Department of Electrical and Computer Engineering,Santa Barbara,USA
Funder
Semiconductor Research Corporation
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10051690/10051691/10051748.pdf?arnumber=10051748
Reference17 articles.
1. G-band Power Amplifiers in 130 nm InP Technology;bao;2020 15th European Microwave Integrated Circuits Conference (EuMIC),2021
2. Millimeter-Wave Series Power Combining Using Sub-Quarter-Wavelength Baluns
3. D-Band and G-Band High-Performance GaN Power Amplifier MMICs;?wikli?ski;IEEE Transactions on Microwave Theory and Techniques,2019
4. A 160-183 GHz 0.24-W (7.5% PAE) PA and 0.14-W (9.5% PAE) PA, High-Gain, G-band Power Amplifier MMICs in 250-nm InP HBT
5. A 600 GHz InP HBT amplifier using cross-coupled feedback stabilization and dual-Differential Power Combining
Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. High-Efficiency 200-GHz Neutralized Common-Base Power Amplifiers in 250-nm InP HBT;IEEE Journal of Microwaves;2023-04
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