24.7 A 15dBm 12.8%-PAE Compact D-Band Power Amplifier with Two-Way Power Combining in 16nm FinFET CMOS-Reference-Cited by-同舟云学术

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24.7 A 15dBm 12.8%-PAE Compact D-Band Power Amplifier with Two-Way Power Combining in 16nm FinFET CMOS

Published:2020-02 Issue: Volume: Page:
ISSN:
Container-title:2020 IEEE International Solid- State Circuits Conference - (ISSCC)
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Author:

Philippe Bart,Reynaert Patrick

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9046640/9062887/09062920.pdf?arnumber=9062920

Cited by 56 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A 140- and 220-GHz Dual-Band Amplifier in 130-nm SiGe BiCMOS Process;IEEE Transactions on Terahertz Science and Technology;2024-09

2. A 16.5-dBm D-Band Eight-Way Power Amplifier Utilizing Cascaded Transformers in 40-nm Bulk CMOS;IEEE Microwave and Wireless Technology Letters;2024-08

3. A Compact D-Band Multiply-by-9 Frequency Multiplier with Inductor-Less Active Balun in 16nm p-FinFET Technology;2024 IEEE Radio Frequency Integrated Circuits Symposium (RFIC);2024-06-16

4. Phased-Array-Compatible Area-Efficient D-Band Power Amplifiers in 45 RF SOI based on Cascade Stacking;2024 IEEE Radio Frequency Integrated Circuits Symposium (RFIC);2024-06-16

5. Compact KiKa-Band Frontend PA and LNA in 16nm FinFET for Next Generation Digitally Intensive Arrays;2024 IEEE/MTT-S International Microwave Symposium - IMS 2024;2024-06-16

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