High-Efficiency 200-GHz Neutralized Common-Base Power Amplifiers in 250-nm InP HBT
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, University of California at Santa Barbara, Santa Barbara, CA, USA
Funder
Semiconductor Research Corporation
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
General Earth and Planetary Sciences,General Environmental Science
Link
http://xplorestaging.ieee.org/ielx7/9171629/10091703/10068341.pdf?arnumber=10068341
Reference32 articles.
1. A 50–80mW SSPA from 190.8–244GHz at 0.5mW Pin;griffith;Proc IEEE MTT-S Int Microw Symp,2014
2. A 190-210GHz Power Amplifier with 17.7-18.5dBm Output Power and 6.9-8.5% PAE
3. 180–265 GHz, 17–24 dBm output power broadband, high-gain power amplifiers in InP HBT
4. A 150–175-GHz 30-dB S 21 Power Amplifier With 125-mW P out and 16.2% PAE Using InP HBT
5. Prospects for High-Efficiency Silicon and lll-V Power Amplifiers and Transmitters in 100-300 GHz Bands
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1. An Investigation of InP DHBT Doherty Amplifier for Enhanced Efficiency in D-Band;2024 25th International Microwave and Radar Conference (MIKON);2024-07-01
2. Experimental study on a sub-terahertz single-carrier transmission exceeding 100Gbps using an ultra-wideband transmission system;IEICE Electronics Express;2024-06-25
3. 220-GHz High-Efficiency Power Amplifiers in 250-nm and 130-nm InP HBT Technologies Having 14.4-25.0% PAE and 40-60 mW $\mathrm{P}_{\text{out}}$;2024 IEEE/MTT-S International Microwave Symposium - IMS 2024;2024-06-16
4. A 220-GHz Power Amplifier With 60-mW P out and 23.5% PAE in 130-nm InP HBT;IEEE Microwave and Wireless Technology Letters;2024-04
5. A 78-mW 220-GHz Power Amplifier With Peak 18.4% PAE in 250-nm InP HBT Technology;IEEE Transactions on Microwave Theory and Techniques;2024
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