220-GHz High-Efficiency Power Amplifiers in 250-nm and 130-nm InP HBT Technologies Having 14.4-25.0% PAE and 40-60 mW $\mathrm{P}

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220-GHz High-Efficiency Power Amplifiers in 250-nm and 130-nm InP HBT Technologies Having 14.4-25.0% PAE and 40-60 mW $\mathrm{P}_{\text{out}}$

Published:2024-06-16 Issue: Volume: Page:966-969
ISSN:
Container-title:2024 IEEE/MTT-S International Microwave Symposium - IMS 2024
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Author:

Griffith Zach¹,Urteaga Miguel¹,Rowell Petra¹

Affiliation:

1. Teledyne Scientific Company,USA

Funder

Defense Advanced Research Projects Agency (DARPA)

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx8/10600173/10600174/10600322.pdf?arnumber=10600322

Reference11 articles.

1. InP HBT Integrated Circuit Technology for Terahertz Frequencies

2. A 130 nm InP HBT integrated circuit technology for THz electronics

3. 50 – 250 GHz High-Gain Power Amplifier MMICs in 250-nm InP HBT

4. 220-GHz High-Efficiency InP HBT Power Amplifiers

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