InP HBT Integrated Circuit Technology for Terahertz Frequencies-Reference-Cited by-同舟云学术

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InP HBT Integrated Circuit Technology for Terahertz Frequencies

Published:2010-10 Issue: Volume: Page:
ISSN:
Container-title:2010 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)
language:
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Author:

Urteaga M.,Seo M.,Hacker J.,Griffith Z.,Young A.,Pierson R.,Rowell P.,Skalare A.,Rodwell M. J. W.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/5618478/5619580/05619675.pdf?arnumber=5619675

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 220-GHz High-Efficiency Power Amplifiers in 250-nm and 130-nm InP HBT Technologies Having 14.4-25.0% PAE and 40-60 mW $\mathrm{P}_{\text{out}}$;2024 IEEE/MTT-S International Microwave Symposium - IMS 2024;2024-06-16

2. Mutually Injection Locked Multi-Element Terahertz Oscillator Based on AlGaN/GaN High Electron Mobility Avalanche Transit Time Devices;IEEE Access;2024

3. Terahertz Radiation from High Electron Mobility Avalanche Transit Time Sources Prospective for Biomedical Spectroscopy;Photonics;2023-07-10

4. RF Reliability of SiGe and InP HBTs: A Comparative Study;2023 IEEE/MTT-S International Microwave Symposium - IMS 2023;2023-06-11

5. InP DHBT Linear Modulator Driver With a 3-Vppd PAM-4 Output Swing at 90 GBaud: From Enhanced Transistor Modeling to Integrated Circuit Design;IEEE Transactions on Microwave Theory and Techniques;2023

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