A Multi-stage 19.2-dBm, 30.4%-PAE D-band Power Amplifier in a 250-nm InP HBT Process
Author:
Affiliation:
1. University of California,Dept. of Electrical and Computer Engineering,Santa Barbara,USA
Funder
Semiconductor Research Corporation
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10187888/10187785/10188076.pdf?arnumber=10188076
Reference10 articles.
1. A Compact, 114-GHz, High-efficiency Power Amplifier in a 250-nm InP HBT Process
2. A 150–175 GHz 30-dB S21 G-band Power Amplifier with 0.25-W Pout and 15.7% PAE in a 250-nm InP HBT Technology
3. A 130-151 GHz 8-Way Power Amplifier with 16.8-17.5 dBm Psat and 11.7-13.4% PAE Using CMOS 45nm RFSOI
4. A 140GHz power amplifier with 20.5dBm output power and 20.8% PAE in 250-nm InP HBT technology
5. A 23.5-dBm, 7.9%-PAE Pseudo-differential Power Amplifier at 136 GHz in 40-nm GaN
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Record 35% Power-Added Efficiency at 170 GHz in 300-nm InP/GaAsSb DHBTs;IEEE Microwave and Wireless Technology Letters;2024-08
2. An Investigation of InP DHBT Doherty Amplifier for Enhanced Efficiency in D-Band;2024 25th International Microwave and Radar Conference (MIKON);2024-07-01
3. On-Wafer 3rd-Order Intermodulation Distortion Measurement of a D-Band Circuit;The Journal of Korean Institute of Electromagnetic Engineering and Science;2024-04
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