A 140GHz power amplifier with 20.5dBm output power and 20.8% PAE in 250-nm InP HBT technology-Reference-Cited by-同舟云学术

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A 140GHz power amplifier with 20.5dBm output power and 20.8% PAE in 250-nm InP HBT technology

Published:2020-08 Issue: Volume: Page:
ISSN:
Container-title:2020 IEEE/MTT-S International Microwave Symposium (IMS)
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Author:

Ahmed Ahmed S. H.,Seo Munkyo,Farid Ali A.,Urteaga Miguel,Buckwalter James F.,Rodwell Mark J. W.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9212188/9223768/09224012.pdf?arnumber=9224012

Cited by 42 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An Investigation of InP DHBT Doherty Amplifier for Enhanced Efficiency in D-Band;2024 25th International Microwave and Radar Conference (MIKON);2024-07-01

2. Phased-Array-Compatible Area-Efficient D-Band Power Amplifiers in 45 RF SOI based on Cascade Stacking;2024 IEEE Radio Frequency Integrated Circuits Symposium (RFIC);2024-06-16

3. A Low Loss Die-Embedded Glass Substrate for 140 GHz InP Power Amplifier Integration;2024 IEEE/MTT-S International Microwave Symposium - IMS 2024;2024-06-16

4. A D-Band Frequency-Doubling Traveling-Wave Amplifier Through Monolithic Integration of a SiC SIW and GaN HEMTs;IEEE Journal of Microwaves;2024-01

5. Introduction to 5G applications and beyond;New Materials and Devices Enabling 5G Applications and Beyond;2024

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