A 150–175 GHz 30-dB S<sub>21</sub> G-band Power Amplifier with 0.25-W P<sub>out</sub> and 15.7% PAE in a 250-nm InP HBT Technology-Reference-Cited by-同舟云学术

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A 150–175 GHz 30-dB S₂₁ G-band Power Amplifier with 0.25-W P_out and 15.7% PAE in a 250-nm InP HBT Technology

Published:2022-06-19 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE/MTT-S International Microwave Symposium - IMS 2022
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Author:

Griffith Zach¹,Urteaga Miguel¹,Rowell Petra¹,Tran Lan¹

Affiliation:

1. Teledyne Scientific Company,USA

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9865233/9865240/09865385.pdf?arnumber=9865385

Reference15 articles.

1. InP HBT Technologies for THz Integrated Circuits

2. A 190-GHz High-Gain, 3-dBm OP1dB Low DC-Power Amplifier in 250-nm InP HBT

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A 220-GHz Power Amplifier With 60-mW P _out and 23.5% PAE in 130-nm InP HBT;IEEE Microwave and Wireless Technology Letters;2024-04

2. On-Wafer 3rd-Order Intermodulation Distortion Measurement of a D-Band Circuit;The Journal of Korean Institute of Electromagnetic Engineering and Science;2024-04

3. Design of a 2.5 THz Schottky-Diode Fourth-Harmonic Mixer;IEEE Transactions on Terahertz Science and Technology;2023-11

4. Multi-Channel PA, LNA, and Switch MMICs for Beam-Switching Applications at 160 GHz, Based on an InGaAs mHEMT Technology;2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2023-10-16

5. A Multi-stage 19.2-dBm, 30.4%-PAE D-band Power Amplifier in a 250-nm InP HBT Process;2023 IEEE/MTT-S International Microwave Symposium - IMS 2023;2023-06-11

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