A 23.5-dBm, 7.9%-PAE Pseudo-differential Power Amplifier at 136 GHz in 40-nm GaN-Reference-Cited by-同舟云学术

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A 23.5-dBm, 7.9%-PAE Pseudo-differential Power Amplifier at 136 GHz in 40-nm GaN

Published:2022-09-26 Issue: Volume: Page:
ISSN:
Container-title:2022 17th European Microwave Integrated Circuits Conference (EuMIC)
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Author:

Lam Eythan¹,Arias-Purdue Andrea¹,O'Malley Everett¹,Buckwalter James F.¹

Affiliation:

1. University of California,Dept. of Electrical and Computer Engineering,Santa Barbara,USA

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9923413/9922957/09923465.pdf?arnumber=9923465

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Record D-Band Performance From Prematched N-Polar GaN-on-Sapphire Transistor With 2 W/mm and 10.6% PAE at 132 GHz;IEEE Microwave and Wireless Technology Letters;2024-04

2. Inductive Source Degeneration in 40-nm GaN HEMTs for Operation Above 100 GHz;IEEE Transactions on Microwave Theory and Techniques;2024-01

3. Comparative Performance of 100–200 GHz Wideband Transceivers: CMOS vs Compound Semiconductors;2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2023-10-16

4. Adaptable 40 nm GaN T-Gate MMIC Processes for Millimeter-Wave Applications;2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2023-10-16

5. D-Band Power Amplifier with 27 dBm Peak Output Power and 14.9% PAE in 250-nm InP HBT Technology;2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2023-10-16

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