D-Band and G-Band High-Performance GaN Power Amplifier MMICs

Author:

Cwiklinski Maciej1ORCID,Bruckner Peter1ORCID,Leone Stefano1ORCID,Friesicke Christian1ORCID,Mabler Hermann1ORCID,Lozar Roger1ORCID,Wagner Sandrine1,Quay Rudiger1ORCID,Ambacher Oliver1

Affiliation:

1. Fraunhofer Institute for Applied Solid State Physics IAF, Freiburg, Germany

Funder

German Federal Ministry of Defence

Bundeswehr Technical Center for Information Technology and Electronics

Bundesministerium der Verteidigung

Research Fab Microelectronics Germany

Bundesministerium für Bildung und Forschung

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation

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1. AD-band Traveling-Wave Amplifier by Embedding GaN HEMTs as Current Probes in a SiC SIW;2024 IEEE/MTT-S International Microwave Symposium - IMS 2024;2024-06-16

2. A 57.3 to 66.2 GHz Millimeter-wave Wireless Link with CMOS Power Amplifier and Wideband Phase-locked Loop;2024 Photonics & Electromagnetics Research Symposium (PIERS);2024-04-21

3. Record D-Band Performance From Prematched N-Polar GaN-on-Sapphire Transistor With 2 W/mm and 10.6% PAE at 132 GHz;IEEE Microwave and Wireless Technology Letters;2024-04

4. Design of a W-band High-PAE Class A & AB Power Amplifier in 150 nm GaAs Technology;Transactions on Electrical and Electronic Materials;2024-02-10

5. Benchmarking a High Electron Mobility Transistor Using an Active Load-Pull System at 120 GHz–170 GHz;2024 102nd ARFTG Microwave Measurement Conference (ARFTG);2024-01-21

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