71–95 GHz (23–40% PAE) and 96–120 GHz (19–22% PAE) high efficiency 100–130 mW power amplifiers in InP HBT-Reference-Cited by-同舟云学术

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71–95 GHz (23–40% PAE) and 96–120 GHz (19–22% PAE) high efficiency 100–130 mW power amplifiers in InP HBT

Published:2016-05 Issue: Volume: Page:
ISSN:
Container-title:2016 IEEE MTT-S International Microwave Symposium (IMS)
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Author:

Griffith Zach,Urteaga Miguel,Rowell Petra,Pierson Richard

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7511996/7538225/07540041.pdf?arnumber=7540041

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Multi-Finger 250-nm InP/GaAsSb DHBTs with Record 37.3 % Class-A PAE at 94 GHz;2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2023-10-16

2. A 7–115-GHz Distributed Amplifier With 24-dBm Output Power Using Quadruple-Stacked HBT in InP;IEEE Microwave and Wireless Technology Letters;2023-06

3. Stacked Common-Base vs Common-Emitter mmWave PA Cells and 68–105 GHz Broadband Asymmetrical PA in 250nm InP HBT;IEEE Access;2023

4. MIDAS mmW Aperture;2022 IEEE International Symposium on Phased Array Systems & Technology (PAST);2022-10-11

5. A Compact, 114-GHz, High-efficiency Power Amplifier in a 250-nm InP HBT Process;2022 IEEE/MTT-S International Microwave Symposium - IMS 2022;2022-06-19

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