Temperature-Dependent Field Cycling Behavior of Ferroelectric Hafnium Zirconium Oxide (HZO) MFM Capacitors
Author:
Affiliation:
1. Department of Electronics and Communication Engineering, IIT Roorkee, Roorkee, India
2. Advanced Product and Technology Development (APTD), Applied Materials, Santa Clara, CA, USA
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/9802454/09773296.pdf?arnumber=9773296
Reference39 articles.
1. Effects of TiN Top Electrode Texturing on Ferroelectricity in Hf1–xZrxO2
2. Optimizing process conditions for improved Hf1−xZrxO2 ferroelectric capacitor performance
3. Electric Field Cycling Behavior of Ferroelectric Hafnium Oxide
4. Temperature dependent fatigue rates in thin-film ferroelectric capacitors
5. Ferroelectric properties and switching endurance of Hf0.5Zr0.5O2films on TiN bottom and TiN or RuO2top electrodes
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