Ferroelectric properties and switching endurance of Hf0.5Zr0.5O2films on TiN bottom and TiN or RuO2top electrodes
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,General Materials Science
Reference20 articles.
1. The Properties of Ferroelectric Films at Small Dimensions
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3. Oxygen-vacancy ordering as a fatigue mechanism in perovskite ferroelectrics
4. Mechanism of Fatigue in Ferroelectric Thin Films
5. Electrode contacts on ferroelectric Pb(ZrxTi1−x)O3and SrBi2Ta2O9thin films and their influence on fatigue properties
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1. Optimal parameter space for stabilizing the ferroelectric phase of Hf0.5Zr0.5O2 thin films under strain and electric fields;Chinese Physics B;2024-07-01
2. Effect of Annealing Temperature on Minimum Domain Size of Ferroelectric Hafnia;ACS Applied Electronic Materials;2024-03-22
3. Hafnia-Based Ferroelectric Memory: Device Physics Strongly Correlated with Materials Chemistry;The Journal of Physical Chemistry Letters;2024-01-22
4. Highly compatible and reliable ZrN interfacial layer between TiN top electrode and antiferroelectric ZrO2 thin film to boost the electrocaloric behavior;Journal of the European Ceramic Society;2024-01
5. Effect of thickness and surface composition on the stability of polarization in ferroelectric HfxZr1−xO2 thin films;Physical Review Materials;2023-12-04
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