Hafnia-Based Ferroelectric Memory: Device Physics Strongly Correlated with Materials Chemistry-Reference-Cited by-同舟云学术

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Hafnia-Based Ferroelectric Memory: Device Physics Strongly Correlated with Materials Chemistry

Published:2024-01-22 Issue:4 Volume:15 Page:983-997
ISSN:1948-7185
Container-title:The Journal of Physical Chemistry Letters
language:en
Short-container-title:J. Phys. Chem. Lett.

Author:

Choi Hyojun¹,Cho Yong Hyeon¹,Kim Se Hyun¹^ORCID,Yang Kun¹,Park Min Hyuk¹²^ORCID

Affiliation:

1. Department of Materials Science and Engineering & Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul 08826, Republic of Korea

2. Research Institute of Advanced Materials, College of Engineering, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul 08826, Republic of Korea

Funder

National Research Foundation of Korea

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpclett.3c03363

Reference102 articles.

1. Ferroelectricity in hafnium oxide thin films

2. Ferroelectricity and Antiferroelectricity of Doped Thin HfO2-Based Films

3. The fundamentals and applications of ferroelectric HfO2

4. Review and perspective on ferroelectric HfO2-based thin films for memory applications

5. Revival of Ferroelectric Memories Based on Emerging Fluorite‐Structured Ferroelectrics

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