Improvement of Polarization Retention at Low and High Temperatures for Hf₀.₅Zr₀.₅O₂ Thin-Film Capacitors
Author:
Affiliation:
1. School of Microelectronics, Fudan University, Shanghai, China
Funder
National Key Basic Research Program of China
National Natural Science Foundation of China
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Link
http://xplorestaging.ieee.org/ielx7/55/10577506/10530244.pdf?arnumber=10530244
Reference22 articles.
1. Stress-Memorized HZO for High-Performance Ferroelectric Field-Effect Memtransistor
2. Ferroelectricity in hafnium oxide thin films
3. A highly CMOS compatible hafnia-based ferroelectric diode
4. Reversible transition between the polar and antipolar phases and its implications for wake-up and fatigue in HfO2-based ferroelectric thin film
5. NVDRAM: A 32 Gb dual layer 3D stacked non-volatile ferroelectric memory with near-DRAM performance for demanding AI workloads;Ramaswamy;IEDM Tech. Dig.,2023
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