Electric Field Cycling Behavior of Ferroelectric Hafnium Oxide-Reference-Cited by-同舟云学术

Electric Field Cycling Behavior of Ferroelectric Hafnium Oxide

Published:2014-11-14 Issue:22 Volume:6 Page:19744-19751
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Schenk Tony¹,Schroeder Uwe¹,Pešić Milan¹,Popovici Mihaela²,Pershin Yuriy V.³,Mikolajick Thomas¹⁴

Affiliation:

1. NaMLab gGmbH, Noethnitzer Str. 64, D-01187 Dresden, Germany

2. Imec, Kapeldreef 75, B-3001 Leuven, Belgium

3. Department of Physics and Astronomy, and the University of South Carolina Nanocenter, University of South Carolina, Columbia, South Carolina 29208, United States

4. Chair of Nanoelectronic Materials, TU Dresden, D-01062 Dresden, Germany

Funder

Deutsche Forschungsgemeinschaft

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/am504837r

Reference39 articles.

1. Ferroelectricity in hafnium oxide thin films

2. Identification of the ferroelectric switching process and dopant-dependent switching properties in orthorhombic HfO2: A first principles insight

3. Pathways towards ferroelectricity in hafnia

4. OrthorhombicABCSemiconductors as Antiferroelectrics

5. Antiferroelectricity in thin-filmZrO2from first principles

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