Influence of annealing atmosphere on polarization behaviors of Hf0.5Zr0.5O2 ferroelectric films deposited on Ti electrodes-Reference-Cited by-同舟云学术

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Influence of annealing atmosphere on polarization behaviors of Hf0.5Zr0.5O2 ferroelectric films deposited on Ti electrodes

Published:2024-08 Issue: Volume: Page:
ISSN:0272-8842
Container-title:Ceramics International
language:en
Short-container-title:Ceramics International

Author:

Chen Haiyan^ORCID,Jiang Chengfeng,Chen Ying,Liu Lei,Yan Zhongna,Li Chuanchang,Zhang Dou^ORCID

Publisher

Elsevier BV

Reference46 articles.

1. Ferroelectric HfO2-based materials for next-generation ferroelectric memories;Fan;J. Adv. Dielec.,2021

2. HfO2-based ferroelectrics: from enhancing performance, material design, to applications;Chen;Appl. Phys. Rev.,2022

3. Stabilization of ferroelectric phase in tungsten capped Hf0.8Zr0.2O2;Karbasian;Appl. Phys. Lett.,2017

4. TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films;Lomenzo;J. Appl. Phys.,2015

5. Analysis of oxygen and nitrogen redistribution at interfaces of HfO2 with laminate TiN/TiAl/TiN electrodes;Konashuk;J. Phys. Chem. C,2020

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