Analysis of Oxygen and Nitrogen Redistribution at Interfaces of HfO2 with Laminate TiN/TiAl/TiN Electrodes
Author:
Affiliation:
1. Institute of Physics, St. Petersburg State University, Ulyanovskaya Str. 1, Peterhof, St. Petersburg 198504, Russia
2. Department of Physics, University of Leuven, Celestijnenlaan 200D, Leuven 3001, Belgium
Funder
KU Leuven
Fonds Wetenschappelijk Onderzoek
Publisher
American Chemical Society (ACS)
Subject
Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.0c04183
Reference48 articles.
1. Charge Transition of Oxygen Vacancies during Resistive Switching in Oxide-Based RRAM
2. Resistive switching mechanisms relating to oxygen vacancies migration in both interfaces in Ti/HfOx/Pt memory devices
3. Role of Oxygen Vacancies at the TiO 2 /HfO 2 Interface in Flexible Oxide‐Based Resistive Switching Memory
4. Reliable resistive switching memory based on oxygen-vacancy-controlled bilayer structures
5. Oxygen Vacancies Control Transition of Resistive Switching Mode in Single-Crystal TiO2 Memory Device
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