Charge Transition of Oxygen Vacancies during Resistive Switching in Oxide-Based RRAM-Reference-Cited by-同舟云学术

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Charge Transition of Oxygen Vacancies during Resistive Switching in Oxide-Based RRAM

Published:2019-02-28 Issue:12 Volume:11 Page:11579-11586
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Lee Jihang,Schell William,Zhu Xiaojian,Kioupakis Emmanouil^ORCID,Lu Wei D.^ORCID

Funder

Horace H. Rackham School of Graduate Studies, University of Michigan

Division of Electrical, Communications and Cyber Systems

Division of Materials Research

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.8b18386

Reference41 articles.

1. Memristive switching mechanism for metal/oxide/metal nanodevices

2. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

3. Memristive devices for computing

4. On‐Demand Reconfiguration of Nanomaterials: When Electronics Meets Ionics

5. Training and operation of an integrated neuromorphic network based on metal-oxide memristors

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