Resistive switching mechanisms relating to oxygen vacancies migration in both interfaces in Ti/HfOx/Pt memory devices
Author:
Funder
National Natural Science Foundation of China
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4791695
Reference25 articles.
1. Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook
2. Fully Room-Temperature-Fabricated Nonvolatile Resistive Memory for Ultrafast and High-Density Memory Application
3. Controllable Growth of Nanoscale Conductive Filaments in Solid-Electrolyte-Based ReRAM by Using a Metal Nanocrystal Covered Bottom Electrode
4. Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High-Performance Memristor
5. Defect engineering: reduction effect of hydrogen atom impurities in HfO2-based resistive-switching memory devices
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