Controllable Growth of Nanoscale Conductive Filaments in Solid-Electrolyte-Based ReRAM by Using a Metal Nanocrystal Covered Bottom Electrode-Reference-Cited by-同舟云学术

Controllable Growth of Nanoscale Conductive Filaments in Solid-Electrolyte-Based ReRAM by Using a Metal Nanocrystal Covered Bottom Electrode

Published:2010-09-20 Issue:10 Volume:4 Page:6162-6168
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Liu Qi¹²,Long Shibing¹,Lv Hangbing¹,Wang Wei¹³,Niu Jiebin¹,Huo Zongliang¹,Chen Junning²,Liu Ming¹

Affiliation:

1. Laboratory of Nano-Fabrication and Novel Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

2. College of Electronics and Technology, Anhui University, Hefei 230039, China

3. College of Nanoscale Science and Engineering (CNSE), University at Albany, New York 12203

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/nn1017582

Reference33 articles.

1. Who Wins the Nonvolatile Memory Race?

2. Magnetic Domain-Wall Racetrack Memory

3. Phase-change materials for rewriteable data storage

4. Nanoionics-based resistive switching memories

5. Resistive switching in transition metal oxides

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