Fully Room-Temperature-Fabricated Nonvolatile Resistive Memory for Ultrafast and High-Density Memory Application-Reference-Cited by-同舟云学术

Fully Room-Temperature-Fabricated Nonvolatile Resistive Memory for Ultrafast and High-Density Memory Application

Published:2009-03-09 Issue:4 Volume:9 Page:1636-1643
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Yang Yu Chao¹,Pan Feng¹,Liu Qi¹,Liu Ming¹,Zeng Fei¹

Affiliation:

1. Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, People’s Republic of China, and Laboratory of Nano-fabrication and Novel Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, People’s Republic of China

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl900006g

Reference31 articles.

1. Who Wins the Nonvolatile Memory Race?

2. Si/a-Si Core/Shell Nanowires as Nonvolatile Crossbar Switches

3. Nanoelectronics from the bottom up

4. Reproducible switching effect in thin oxide films for memory applications

5. Two Series Oxide Resistors Applicable to High Speed and High Density Nonvolatile Memory

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