Two Series Oxide Resistors Applicable to High Speed and High Density Nonvolatile Memory-Reference-Cited by-同舟云学术

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Two Series Oxide Resistors Applicable to High Speed and High Density Nonvolatile Memory

Published:2007-11-19 Issue:22 Volume:19 Page:3919-3923
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Lee M.-J.,Park Y.,Suh D.-S.,Lee E.-H.,Seo S.,Kim D.-C.,Jung R.,Kang B.-S.,Ahn S.-E.,Lee C. B.,Seo D. H.,Cha Y.-K.,Yoo I.-K.,Kim J.-S.,Park B. H.

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Reference14 articles.

1. Electric-pulse-induced reversible resistance change effect in magnetoresistive films

2. Reproducible resistance switching in polycrystalline NiO films

3. Current-driven insulator–conductor transition and nonvolatile memory in chromium-doped SrTiO3 single crystals

4. A Low-Temperature-Grown Oxide Diode as a New Switch Element for High-Density, Nonvolatile Memories

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