A Low-Temperature-Grown Oxide Diode as a New Switch Element for High-Density, Nonvolatile Memories-Reference-Cited by-同舟云学术

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A Low-Temperature-Grown Oxide Diode as a New Switch Element for High-Density, Nonvolatile Memories

Published:2007-01-08 Issue:1 Volume:19 Page:73-76
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Lee M.-J.,Seo S.,Kim D.-C.,Ahn S.-E.,Seo D. H.,Yoo I.-K.,Baek I.-G.,Kim D.-S.,Byun I.-S.,Kim S.-H.,Hwang I.-R.,Kim J.-S.,Jeon S.-H.,Park B. H.

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Reference15 articles.

1. Fabrication of transparent p–n heterojunction thin film diodes based entirely on oxide semiconductors

2. Oxide Thin Film Diode Fabricated by Liquid-Phase Method

3. Oxygen Vacancies as Active Sites for Water Dissociation on RutileTiO2(110)

4. Bistable switching in ZrZrO2Au junctions

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