Resistive Switching Properties in Memristors for Optoelectronic Synaptic Memristors: Deposition Techniques, Key Performance Parameters, and Applications-Reference-Cited by-同舟云学术

Resistive Switching Properties in Memristors for Optoelectronic Synaptic Memristors: Deposition Techniques, Key Performance Parameters, and Applications

Published:2023-12-29 Issue:1 Volume:6 Page:73-119
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Khan Rajwali¹²^ORCID,Rehman Naveed Ur²,Iqbal Shahid³,Abdullaev Sherzod⁴⁵,Aldosari Haila M.¹

Affiliation:

1. Department of Physics, United Arab Emirates University, Al Ain 15551, Abu Dhabi, United Arab Emirates

2. Department of Physics, University of Lakki Marwat, Lakki Marwat, 2842, KP, Pakistan

3. Department of Physics, University of Wisconsin, La Crosse, WI 54601, United States

4. Engineering School, Central Asian University, Tashkent 111221, Uzbekistan

5. Scientific and Innovation Department, Tashkent State Pedagogical University Named after Nizami, Tashkent 100096, Uzbekistan

Funder

United Arab Emirates University

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.3c01323

Reference660 articles.

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5. Processing in memory: the Terasys massively parallel PIM array

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