Self-rectifying and forming-free resistive switching with Cu/BN/SiO2/Pt bilayer device

Author:

Ranjan Harsh,Singh Chandra Prakash,Singh Vivek Pratap,Pandey Saurabh KumarORCID

Funder

Department of Science and Technology

Publisher

Elsevier BV

Reference44 articles.

1. Redox-based resistive switching memories–nanoionic mechanisms, prospects, and challenges;Waser;Adv. Mater.,2009

2. Analysis of resistive switching mechanism in hexagonal boron nitride 2d material based memristive device;Ranjan,2023

3. Performance analysis of forming free switching dynamics of e-beam evaporated snox based resistive switching device;Singh;IEEE Trans. Electron. Dev.,2022

4. Geometric conductive filament confinement by nanotips for resistive switching of hfo2-rram devices with high performance;Niu;Sci. Rep.,2016

5. Switching the electrical resistance of individual dislocations in single-crystalline srtio3;Szot;Nat. Mater.,2006

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