Oxygen Vacancies Control Transition of Resistive Switching Mode in Single-Crystal TiO2 Memory Device
Author:
Affiliation:
1. Institut National de Recherche Scientifique, Centre Énergie Matériaux Télécommunications, 1650, Boulevard Lionel-Boulet, Varennes, Québec J3X 1S2, Canada
Funder
Fonds de Recherche du Québec - Nature et Technologies
Canada Research Chairs
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsami.7b03527
Reference42 articles.
1. Nanoionics-based resistive switching memories
2. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
3. Switching Kinetic of VCM-Based Memristor: Evolution and Positioning of Nanofilament
4. Observing Oxygen Vacancy Driven Electroforming in Pt–TiO2–Pt Device via Strong Metal Support Interaction
5. Observation of Conductance Quantization in Oxide-Based Resistive Switching Memory
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