Observation of Conductance Quantization in Oxide-Based Resistive Switching Memory-Reference-Cited by-同舟云学术

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Observation of Conductance Quantization in Oxide-Based Resistive Switching Memory

Published:2012-06-18 Issue:29 Volume:24 Page:3941-3946
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Zhu Xiaojian,Su Wenjing,Liu Yiwei,Hu Benlin,Pan Liang,Lu Wei,Zhang Jiandi,Li Run-Wei

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/adma.201201506/fullpdf

Reference30 articles.

1. Moore's Law Forever?

2. A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

3. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

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