A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures-Reference-Cited by-同舟云学术

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

Published:2011-07-10 Issue:8 Volume:10 Page:625-630
ISSN:1476-1122
Container-title:Nature Materials
language:en
Short-container-title:Nature Mater

Author:

Lee Myoung-Jae,Lee Chang Bum,Lee Dongsoo,Lee Seung Ryul,Chang Man,Hur Ji Hyun,Kim Young-Bae,Kim Chang-Jung,Seo David H.,Seo Sunae,Chung U-In,Yoo In-Kyeong,Kim Kinam

Publisher

Springer Science and Business Media LLC

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://www.nature.com/articles/nmat3070.pdf

Reference29 articles.

1. Hamann, H. F., O’Boyle, M., Martin, Y. C., Rooks, M. & Wickramasinghe, H. K. Ultra-high-density phase-change storage and memory. Nature Mater. 5, 383–387 (2006).

2. Setter, N. et al. Ferroelectric thin films: Review of materials, properties, and applications. J. Appl. Phys. 100, 051606 (2006).

3. Liu, H. et al. Ultrafast switching in magnetic tunnel junction based orthogonal spin transfer devices. Appl. Phys. Lett. 97, 242510 (2010).

4. Moller, S., Perlov, C., Jackson, W., Taussig, C. & Forrest, S. R. A polymer/semiconductor write-once read-many-times memory. Nature 426, 166–169 (2003).

5. Lee, M-J. et al. Electrical manipulation of nanofilaments in transition-metal oxides for resistance-based memory. Nano Lett. 9, 1476–1481 (2009).

Cited by 1795 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Memristor-induced hyperchaos, multiscroll and extreme multistability in fractional-order HNN: Image encryption and FPGA implementation;Neural Networks;2024-03

2. Improved resistive switching performance of amorphous InGaZnO-based memristor with the TiO2 insertion layer;Ceramics International;2024-03

3. Multilevel and Low-Power Resistive Switching Based on pn Heterojunction Memory;Journal of Electronic Materials;2024-02-01

4. 220 V/50 Hz Compatible Bipolar Quantum‐Dot Light‐Emitting Diodes;Advanced Materials;2024-01-23

5. Bioresorbable Resistive Switching Device Based on Organic/Inorganic Hybrid Structure for Transient Memory Applications;Advanced Electronic Materials;2024-01-23