Electrical Manipulation of Nanofilaments in Transition-Metal Oxides for Resistance-Based Memory-Reference-Cited by-同舟云学术

Electrical Manipulation of Nanofilaments in Transition-Metal Oxides for Resistance-Based Memory

Published:2009-03-18 Issue:4 Volume:9 Page:1476-1481
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Lee Myoung-Jae¹,Han Seungwu¹,Jeon Sang Ho¹,Park Bae Ho¹,Kang Bo Soo¹,Ahn Seung-Eon¹,Kim Ki Hwan¹,Lee Chang Bum¹,Kim Chang Jung¹,Yoo In-Kyeong¹,Seo David H.¹,Li Xiang-Shu¹,Park Jong-Bong¹,Lee Jung-Hyun¹,Park Youngsoo¹

Affiliation:

1. Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd. San 14-1, Yongin-si, Gyeonggi-Do, 446-712, Korea, Department of Physics, Ewha Womans University, Seoul 120-750, Korea, Division of Quantum Phases & Devices, School of Physics, Konkuk University, Seoul 143-701, Korea, and Department of Materials Science and Engineering, Stanford University, Palo Alto, California 94305

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl803387q

Reference18 articles.

1. Resistance switching in the metal deficient-type oxides: NiO and CoO

2. A polymer/semiconductor write-once read-many-times memory

3. A Low-Temperature-Grown Oxide Diode as a New Switch Element for High-Density, Nonvolatile Memories

4. Si/a-Si Core/Shell Nanowires as Nonvolatile Crossbar Switches

5. Room-temperature transistor based on a single carbon nanotube

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