NbOx RRAM performance enhancement by surface modification with Au nanoparticles-Reference-Cited by-同舟云学术

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NbOx RRAM performance enhancement by surface modification with Au nanoparticles

Published:2024-09 Issue: Volume:227 Page:113422
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

Xu Jing^ORCID,Qiao Lu,Yang Yadong,Liu Yong,Zhu Yuanyuan,Cheng Jinbing,Wang Hongjun,Xiong Rui

Publisher

Elsevier BV

Reference41 articles.

1. Complex oxides for brain-inspired computing: a review;Park;Adv. Mater.,2023

2. Neuromorphic engineering: from materials to device application;Yang;Adv. Mater.,2023

3. Nonvolatile electrical bistability of organic/metal-nanocluster/organic system;Ma;Appl. Phys. Lett.,2003

4. Design of CMOS compatible, high-speed, highly-stable complementary switching with multilevel operation in 3D vertically stacked novel HfO2/Al2O3/TiOx (HAT) RRAM;Banerjee;Adv. Electron. Mater.,2018

5. Metal – oxide RRAM;Wong;Proc. IEEE,2012

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improving the switching behavior of TaOx/HfO2-based non-volatile memristors by embedded Ti and Pt nano-islands;Materials Science in Semiconductor Processing;2024-12

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