Design of CMOS Compatible, High-Speed, Highly-Stable Complementary Switching with Multilevel Operation in 3D Vertically Stacked Novel HfO2 /Al2 O3 /TiO x (HAT) RRAM-Reference-Cited by-同舟云学术

Design of CMOS Compatible, High-Speed, Highly-Stable Complementary Switching with Multilevel Operation in 3D Vertically Stacked Novel HfO2 /Al2 O3 /TiO x (HAT) RRAM

Published:2018-01-08 Issue:2 Volume:4 Page:1700561
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Banerjee Writam¹²^ORCID,Zhang Xumeng¹²,Luo Qing¹²,Lv Hangbing¹²,Liu Qi¹²,Long Shibing¹²,Liu Ming¹²

Affiliation:

1. Key Laboratory of Microelectronics Devices and Integrated Technology; Institute of Microelectronics; Chinese Academy of Sciences; No. 3, BeiTuCheng West Road Chao Yang District Beijing 100029 P. R. China

2. Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM); Nanjing 210009 China

Funder

Ministry of Science and Technology of the People's Republic of China

CAS President's International Fellowship Initiative

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Reference39 articles.

1. Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

2. Access devices for 3D crosspoint memory

3. Emerging memories: resistive switching mechanisms and current status