Optimization of the Forming Process of HfO<sub><i>x</i></sub>-Based RRAM to Achieve Bidirectional Forming and Enhanced Switching Performance by Inserting an Oxygen-Vacancy-Rich Layer-Reference-Cited by-同舟云学术

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Optimization of the Forming Process of HfO_x-Based RRAM to Achieve Bidirectional Forming and Enhanced Switching Performance by Inserting an Oxygen-Vacancy-Rich Layer

Published:2024-05-14 Issue:5 Volume:6 Page:3158-3166
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Yang Fei¹^ORCID,Lou Shilong¹,He Zijian¹,Liu Bingkun¹,Li Duogui¹,Hu Bo¹,Wang Wentao¹

Affiliation:

1. School of Integrated Circuits, Anhui University, Hefei 230601, China

Funder

University Natural Science Research Project of Anhui Province

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.3c01740

Reference27 articles.

1. Nanoscale Memristor Device as Synapse in Neuromorphic Systems

2. Memristive devices for computing

3. Design of CMOS Compatible, High-Speed, Highly-Stable Complementary Switching with Multilevel Operation in 3D Vertically Stacked Novel HfO2 /Al2 O3 /TiO x (HAT) RRAM

4. Reset-voltage-dependent precise tuning operation of TiOx/Al2O3 memristive crossbar array

5. Spike-timing-dependent plasticity learning of coincidence detection with passively integrated memristive circuits

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