Complementary Switching in 3D Resistive Memory Array-Reference-Cited by-同舟云学术

Complementary Switching in 3D Resistive Memory Array

Published:2017-10-10 Issue:12 Volume:3 Page:1700287
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Banerjee Writam¹²³,Xu Xiaoxin¹²³,Lv Hangbing¹²³,Liu Qi¹²³,Long Shibing¹²³,Liu Ming¹²³

Affiliation:

1. Key Laboratory of Microelectronics Devices and Integrated Technology; Institute of Microelectronics; Chinese Academy of Sciences; No. 3, BeiTuCheng West Road ChaoYang District Beijing 100029 P. R. China

2. University of Chinese Academy of Sciences; Beijing 100049 China

3. Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM); Nanjing 210009 China

Funder

Ministry of Science and Technology of the People's Republic of China

CAS President's International Fellowship Initiative

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Reference50 articles.

1. Access devices for 3D crosspoint memory

2. Emerging memories: resistive switching mechanisms and current status

3. Crystal that remembers: several ways to utilize nanocrystals in resistive switching memory

4. 2012

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