A study on the gamma and swift heavy ion irradiation-induced effects on the electrical properties of TaO -based MOS capacitors-Reference-Cited by-同舟云学术

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A study on the gamma and swift heavy ion irradiation-induced effects on the electrical properties of TaO -based MOS capacitors

Published:2024-09 Issue: Volume:554 Page:165455
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Goud R. Sai Prasad^ORCID,Akkanaboina Mangababu,Machiboyina Sravani^ORCID,Kumar Kanaka Ravi^ORCID,Anjum Arshiya^ORCID,Khan Saif A.,Prakash A.P. Gnana,Pathak A.P.^ORCID,Rao S.V.S. Nageswara^ORCID

Publisher

Elsevier BV

Reference68 articles.

1. Total-ionizing-dose effects in modern CMOS technologies;Barnaby;IEEE Trans. Nucl. Sci.,2006

2. “Status and future prospects of CMOS scaling and moore’s law - a personal perspective”, LAEDC 2020 - Lat;Schwierz;Am. Electron Devices Conf.,2020

3. CMOS scaling and beyond;Kikkawa;Proc. Cust. Integr. Circuits Conf.,2009

4. Design of CMOS compatible, high-speed, highly-stable complementary switching with multilevel operation in 3D vertically stacked novel HfO2/Al2O3/TiOx (HAT) RRAM;Banerjee;Adv. Electron. Mater.,2018

5. From displacement damage to ELDRS: fifty years of bipolar transistor radiation effects at the NSREC;Galloway;IEEE Trans. Nucl. Sci.,2013

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