Observing Oxygen Vacancy Driven Electroforming in Pt–TiO2–Pt Device via Strong Metal Support Interaction-Reference-Cited by-同舟云学术

Observing Oxygen Vacancy Driven Electroforming in Pt–TiO2–Pt Device via Strong Metal Support Interaction

Published:2016-03-18 Issue:4 Volume:16 Page:2139-2144
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Jang Moon Hyung¹,Agarwal Rahul¹,Nukala Pavan¹,Choi Dooho¹,Johnson A. T. Charlie¹,Chen I-Wei¹,Agarwal Ritesh¹

Affiliation:

1. Department of Materials Science and Engineering, ‡Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States

Funder

Division of Materials Research

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.5b02951

Reference30 articles.

1. Role of Oxygen Vacancies in Cr-Doped SrTiO3 for Resistance-Change Memory

2. A Resistive Memory in Semiconducting BiFeO3 Thin-Film Capacitors

3. Three-Dimensional Integration of Organic Resistive Memory Devices

4. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

5. Electrical observations of filamentary conductions for the resistive memory switching in NiO films

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