Role of Oxygen Vacancies in Cr-Doped SrTiO3 for Resistance-Change Memory-Reference-Cited by-同舟云学术

Role of Oxygen Vacancies in Cr-Doped SrTiO3 for Resistance-Change Memory

Published:2007-09-03 Issue:17 Volume:19 Page:2232-2235
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Janousch M.,Meijer G. I.,Staub U.,Delley B.,Karg S. F.,Andreasson B. P.

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Reference23 articles.

1. See for example: International Technology Roadmap for Semiconductors, 2005 Edition, Emerging Research Devices, http://www.itrs.net/Links/2005ITRS/ERD2005.pdf (accessed June 2007).

2. Magnetically engineered spintronic sensors and memory

3. Magnetoresistive random access memory using magnetic tunnel junctions

4. Ultra-high-density phase-change storage and memory

5. Reversible Electrical Switching Phenomena in Disordered Structures

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