Investigation of resistive switching properties in acceptor-induced Sr(Fe,Ti)O3 thin film memristor-Reference-Cited by-同舟云学术

Investigation of resistive switching properties in acceptor-induced Sr(Fe,Ti)O3 thin film memristor

Published:2023-06 Issue: Volume:35 Page:105593
ISSN:2352-4928
Container-title:Materials Today Communications
language:en
Short-container-title:Materials Today Communications

Author:

Ge Peng-Zu,Tang Hui,Huang Xian-Xiong,Tang Xin-Gui,Jiang Yan-Ping,Liu Qiu-Xiang

Funder

National Natural Science Foundation of China

Basic and Applied Basic Research Foundation of Guangdong Province

Publisher

Elsevier BV

Subject

Materials Chemistry,Mechanics of Materials,General Materials Science

Reference39 articles.

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3. Effects of switching layer morphology on resistive switching behavior: a case study of electrochemically synthesized mixed-phase copper oxide memristive devices;Kundale;Appl. Mater. Today,2022

4. Amorphous Boron Nitride Memristive Device for High-Density Memory and Neuromorphic Computing Applications;Khot;ACS Appl. Mater. Interfaces,2022

5. Capacitive effect: an original of the resistive switching memory;Zhou;Nano Energy,2020

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