Electrical observations of filamentary conductions for the resistive memory switching in NiO films-Reference-Cited by-同舟云学术

Electrical observations of filamentary conductions for the resistive memory switching in NiO films

Published:2006-05-15 Issue:20 Volume:88 Page:202102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kim D. C.,Seo S.,Ahn S. E.,Suh D.-S.,Lee M. J.,Park B.-H.,Yoo I. K.,Baek I. G.,Kim H.-J.,Yim E. K.,Lee J. E.,Park S. O.,Kim H. S.,Chung U-In,Moon J. T.,Ryu B. I.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2204649

Reference10 articles.

1. Electrical phenomena in amorphous oxide films

2. Reproducible resistance switching in polycrystalline NiO films

3. Conductivity switching characteristics and reset currents in NiO films

4. Snapback behavior of the postbreakdown I–V characteristics in ultrathin SiO2 films

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