Three-Dimensional Integration of Organic Resistive Memory Devices-Reference-Cited by-同舟云学术

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Three-Dimensional Integration of Organic Resistive Memory Devices

Published:2010-09-13 Issue:44 Volume:22 Page:5048-5052
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Song Sunghoon,Cho Byungjin,Kim Tae-Wook,Ji Yongsung,Jo Minseok,Wang Gunuk,Choe Minhyeok,Kahng Yung Ho,Hwang Hyunsang,Lee Takhee

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Reference36 articles.

1. Solitons in conducting polymers

2. Stretchable active-matrix organic light-emitting diode display using printable elastic conductors

3. Solution-processed, high-performance n-channel organic microwire transistors

4. Organic transistors manufactured using inkjet technology with subfemtoliter accuracy

5. Ultralow-power organic complementary circuits

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1. Resistive random-access memories using quasi-2D halide perovskites for wafer-scale reliable switching behaviors;Materials Science in Semiconductor Processing;2024-11

2. Stable switching behavior of low-temperature ZrO2 RRAM devices realized by combustion synthesis-assisted photopatterning;Journal of Materials Science & Technology;2024-08

3. 2D Halide Perovskites for High‐Performance Resistive Switching Memory and Artificial Synapse Applications;Advanced Science;2024-04-22

4. Research progress of artificial neural systems based on memristors;Materials Today Nano;2024-03

5. Organic radicals in single-molecule junctions;Science China Materials;2024-02-22

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