Stable switching behavior of low-temperature ZrO2 RRAM devices realized by combustion synthesis-assisted photopatterning-Reference-Cited by-同舟云学术

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Stable switching behavior of low-temperature ZrO2 RRAM devices realized by combustion synthesis-assisted photopatterning

Published:2024-08 Issue: Volume:189 Page:68-76
ISSN:1005-0302
Container-title:Journal of Materials Science & Technology
language:en
Short-container-title:Journal of Materials Science & Technology

Author:

Jang Bongho,Kim Junil,Lee Jieun,Jang Jaewon,Kwon Hyuk-Jun^ORCID

Funder

National Research Foundation of Korea

Daegu Gyeongbuk Institute of Science and Technology

Ministry of Science, ICT and Future Planning

Publisher

Elsevier BV

Reference73 articles.

1. Polymer Analog Memristive Synapse with Atomic-Scale Conductive Filament for Flexible Neuromorphic Computing System

2. Nonvolatile Memories Based on Graphene and Related 2D Materials

3. Resistive switching characteristics of all-solution-based Ag/TiO2/Mo-doped In2O3devices for non-volatile memory applications

4. Graphene Based Non-Volatile Memory Devices

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An overview of critical applications of resistive random access memory;Nanoscale Advances;2024

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