Identification of the ferroelectric switching process and dopant-dependent switching properties in orthorhombic HfO2: A first principles insight
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4867975
Reference18 articles.
1. Downscaling ferroelectric field effect transistors by using ferroelectric Si-doped HfO2
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