Unlocking the Potential of Hafnia Ferroelectrics: Achieving High Reliability via Plasma Frequency Modulation in Very High-Frequency Plasma-Enhanced Atomic Layer Deposition
Author:
Affiliation:
1. School of electrical engineering, Korea Advanced Institute of Science and Technology, 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Korea
2. NANOTECH Inc., Daeji-ro 261-1 Suji-gu, Yongin-si, Gyeonggi-do 16882, Korea
Funder
National Research Foundation of Korea
Publisher
American Chemical Society (ACS)
Link
https://pubs.acs.org/doi/pdf/10.1021/acsaelm.4c00630
Reference61 articles.
1. Ferroelectric Hafnium Zirconium Oxide Compatible With Back-End-of-Line Process
2. Power-Delay Area-Efficient Processing-In-Memory Based on Nanocrystalline Hafnia Ferroelectric Field-Effect Transistors
3. A review on morphotropic phase boundary in fluorite-structure hafnia towards DRAM technology
4. Insertion of Dielectric Interlayer: A New Approach to Enhance Energy Storage in HfₓZr1-xO₂ Capacitors
5. Direct growth of orthorhombic Hf0.5Zr0.5O2 thin films for hysteresis-free MoS2 negative capacitance field-effect transistors
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