Ferroelectric Hafnium Zirconium Oxide Compatible With Back-End-of-Line Process
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
https://ieeexplore.ieee.org/ielam/16/9462946/9416818-aam.pdf
Cited by 27 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Mechanisms for enhanced ferroelectric properties in ultra-thin Hf0.5Zr0.5O2 film under low-temperature, long-term annealing;Applied Physics Letters;2024-08-26
2. Low Voltage High Polarization by Optimizing Scavenged WNx Interfacial Capping Layer at the Ru/HfxZr1‐xO2 Interface and Evidence of Fatigue Mechanism;Advanced Materials Interfaces;2024-06-27
3. Unlocking the Potential of Hafnia Ferroelectrics: Achieving High Reliability via Plasma Frequency Modulation in Very High-Frequency Plasma-Enhanced Atomic Layer Deposition;ACS Applied Electronic Materials;2024-06-24
4. Stabilization of Morphotropic Phase Boundary in Hafnia via Microwave Low‐Temperature Crystallization Process for Next‐Generation Dynamic Random Access Memory Technology;physica status solidi (RRL) – Rapid Research Letters;2024-05-21
5. Back-End of Line Compatible Hf0.5Zr0.5O2/ZrO2/Hf0.5Zr0.5O2 Stack Achieving 2P r of 39.6 μC/cm2 and Endurance Exceeding 1010 Cycles under Low-Voltage Operation;IEEE Electron Device Letters;2024
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