Effects of TiN Top Electrode Texturing on Ferroelectricity in Hf1–xZrxO2
Author:
Affiliation:
1. Electrical and Information Technology, Lund University, Box 118, 22 100 Lund, Sweden
2. NanoLund Lund University, Box 118, 22 100 Lund, Sweden
3. Division of Synchrotron Radiation Research, Lund University, Box 118, 22 100 Lund, Sweden
Funder
Vetenskapsr?det
NanoLund, Lund University
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsami.1c01734
Reference31 articles.
1. Ferroelectricity in hafnium oxide thin films
2. Ferroelectric Second-Order Memristor
3. HfZrOx-Based Ferroelectric Synapse Device With 32 Levels of Conductance States for Neuromorphic Applications
4. Impact of mechanical stress on ferroelectricity in (Hf0.5Zr0.5)O2 thin films
5. Ferroelectricity in Simple Binary ZrO2 and HfO2
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