HfZrO<italic>x</italic>-Based Ferroelectric Synapse Device With 32 Levels of Conductance States for Neuromorphic Applications-Reference-Cited by-同舟云学术

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HfZrOx-Based Ferroelectric Synapse Device With 32 Levels of Conductance States for Neuromorphic Applications

Published:2017-06 Issue:6 Volume:38 Page:732-735
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Oh Seungyeol^ORCID,Kim Taeho,Kwak Myunghoon,Song Jeonghwan,Woo Jiyong^ORCID,Jeon Sanghun^ORCID,Yoo In Kyeong,Hwang Hyunsang

Funder

Ministry of Trade, Industry & Energy

Korea Semiconductor Research Consortium Support Program for the development of the future semiconductor device

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/7932562/07912345.pdf?arnumber=7912345

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