Investigation of Hf₀.₅Zr₀.₅O₂ Ferroelectric Films at Low Thermal Budget (300 °C)-Reference-Cited by-同舟云学术

Investigation of Hf₀.₅Zr₀.₅O₂ Ferroelectric Films at Low Thermal Budget (300 °C)

Published:2024-08 Issue:8 Volume:71 Page:5150-5155
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Dai Saifei¹^ORCID,Chai Junshuai¹^ORCID,Duan Jiahui¹^ORCID,Xiang Jinjuan²,Han Kai³^ORCID,Wang Yanrong⁴,Xu Hao¹^ORCID,Zhang Jing⁴,Wang Xiaolei¹^ORCID,Wang Wenwu¹

Affiliation:

1. Key Laboratory of Fabrication Technologies for Integrated Circuits and the Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China

2. Beijing Superstring Academy of Memory Technology, Beijing, China

3. School of Physics and Electronic Information, Weifang University, Weifang, Shandong, China

4. School of Information Science and Technology, North China University of Technology, Beijing, China

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Research and Development Program of Beijing Municipal Education Commission

Young Elite Scientists Sponsorship Program

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx8/16/10609410/10577663.pdf?arnumber=10577663

Reference43 articles.

1. Ferroelectricity in hafnium oxide thin films

2. Ferroelectricity and Antiferroelectricity of Doped Thin HfO2-Based Films

3. Understanding the formation of the metastable ferroelectric phase in hafnia–zirconia solid solution thin films

4. Hybrid 1T e-DRAM and e-NVM Realized in One 10 nm node Ferro FinFET device with Charge Trapping and Domain Switching Effects

5. Deep Insights into the Failure Mechanisms in Field-cycled Ferroelectric Hf0.5Zr0.5O2 Thin Film: TDDB Characterizations and First-Principles Calculations