Hybrid 1T e-DRAM and e-NVM Realized in One 10 nm node Ferro FinFET device with Charge Trapping and Domain Switching Effects-Reference-Cited by-同舟云学术

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Hybrid 1T e-DRAM and e-NVM Realized in One 10 nm node Ferro FinFET device with Charge Trapping and Domain Switching Effects

Published:2018-12 Issue: Volume: Page:
ISSN:
Container-title:2018 IEEE International Electron Devices Meeting (IEDM)
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Author:

Luo Qing,Gong Tiancheng,Cheng Yan,Zhang Qingzhu,Yu Haoran,Yu Jie,Ma Haili,Xu Xiaoxin,Huang Kailiang,Zhu Xi,Dona Danian,Yin Jiahao,Yuan Peng,Tai Lu,Gao Jianfeng,Li Junfeng,Yin Huaxiang,Long Shibing,Liu Qi,Lv Hangbing,Liu Ming

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8601505/8614478/08614650.pdf?arnumber=8614650

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