Impact of mechanical stress on ferroelectricity in (Hf0.5Zr0.5)O2 thin films-Reference-Cited by-同舟云学术

Impact of mechanical stress on ferroelectricity in (Hf0.5Zr0.5)O2 thin films

Published:2016-06-27 Issue:26 Volume:108 Page:262904
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Shiraishi Takahisa¹²,Katayama Kiliha¹^ORCID,Yokouchi Tatsuhiko¹,Shimizu Takao³,Oikawa Takahiro¹,Sakata Osami¹⁴⁵,Uchida Hiroshi⁶^ORCID,Imai Yasuhiko⁵,Kiguchi Takanori²,Konno Toyohiko J.²,Funakubo Hiroshi¹³⁷

Affiliation:

1. Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8502, Japan

2. Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

3. Materials Research Center for Element Strategy, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8502, Japan

4. Synchrotron X-ray Station at SPring-8, National Institute for Materials Science (NIMS), Kouto, Sayo-cho, Sayo-gun, Hyogo 679-5148, Japan

5. Japan Synchrotron Radiation Research Institute (JASRI), Kouto, Sayo-cho, Sayo-gun, Hyogo 679-5198, Japan

6. Department of Materials and Life Sciences, Sophia University, Chiyoda, Tokyo 102-8554, Japan

7. Department of Materials Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8502, Japan

Funder

Japan Society for the Promotion of Science (JSPS)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4954942

Reference37 articles.

1. Ferroelectric thin films: Review of materials, properties, and applications

2. A new ferroelectric memory device, metal-ferroelectric-semiconductor transistor

3. Ferroelectric Field Effect Transistors for Memory Applications

4. Ferroelectric thin films for micro-sensors and actuators: a review

5. Thin HfxZr1-xO2Films: A New Lead-Free System for Electrostatic Supercapacitors with Large Energy Storage Density and Robust Thermal Stability

Cited by 213 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Superior electrical properties and ferroelectric stability of Hf0.85Ce0.15O2-ZrO2 stacks on Si and flexible mica substrates;Journal of the European Ceramic Society;2025-02

2. Robust ferroelectric and low coercive field in ZrO2 thin film through wide chemical-processing window;Nano Today;2024-12

3. Physical origin of hafnium-based ferroelectricity;Computational Materials Today;2024-12

4. Structural characteristics and polarization switching behaviors in HfO2-ZrO2 ferroelectric nanolaminates;Journal of Alloys and Compounds;2024-11

5. Effect of atomic layer deposition process parameters on TiN electrode for Hf_0.5Zr_0.5O₂ ferroelectric capacitor;Semiconductor Science and Technology;2024-09-13