Ferroelectric Field Effect Transistors for Memory Applications-Reference-Cited by-同舟云学术

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Ferroelectric Field Effect Transistors for Memory Applications

Published:2010-04-09 Issue:26-27 Volume:22 Page:2957-2961
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Hoffman Jason,Pan Xiao,Reiner James W.,Walker Fred J.,Han J. P.,Ahn Charles H.,Ma T. P.

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Reference37 articles.

1. High-density chain ferroelectric random access memory (chain FRAM)

2. Current Status of Ferroelectric Random-Access Memory

3. Ferroelectric thin films: Review of materials, properties, and applications

4. A 1.6GB/s DDR2 128Mb chain FeRAM with scalable octal bitline and sensing schemes

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